聚丙烯膜電容器
POLYPROPYLENE FILM AND FOIL CAPACITOR (PPN)
聚丙烯膜電容器
適合使用於SPS、Monitor、高頻式電子安定器等…
PPN TYPE:
RV | 250VDC | 400VDC | 630VDC | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SIZE | W | H | T | P±1 | dø | W | H | T | P±1 | dø | W | H | T | P±1 | dø |
CAP | |||||||||||||||
.001 | 11 | 10 | 6 | 7.5 | 0.6 | 15 | 13 | 7 | 8 | 0.6 | 15 | 13 | 7 | 8 | 0.6 |
.0015 | 11 | 10 | 6 | 7.5 | 0.6 | 15 | 13 | 7 | 8 | 0.6 | 15 | 13 | 7 | 8 | 0.6 |
.0022 | 11 | 10 | 6 | 7.5 | 0.6 | 15 | 13 | 7 | 8 | 0.6 | 15 | 13 | 8 | 10 | 0.6 |
.0033 | 11 | 10 | 6 | 7.5 | 0.6 | 15 | 13 | 7 | 10 | 0.6 | 15 | 13 | 8 | 10 | 0.6 |
.0047 | 11 | 10 | 6 | 7.5 | 0.6 | 15 | 13 | 7 | 10 | 0.6 | 15 | 13 | 9 | 10 | 0.6 |
.0068 | 11 | 10 | 6 | 7.5 | 0.6 | 15 | 13 | 7 | 10 | 0.6 | 20 | 12 | 9 | 15 | 0.8 |
.01 | 11 | 10 | 6 | 7.5 | 0.6 | 15 | 14 | 9 | 10 | 0.6 | 20 | 15 | 11 | 15 | 0.8 |
.015 | 13 | 12 | 8 | 10 | 0.6 | 15 | 14 | 9 | 10 | 0.6 | 20 | 18 | 14 | 15 | 0.8 |
.022 | 13 | 14 | 9 | 10 | 0.6 | 20 | 14 | 9 | 15 | 0.6 | 20 | 18 | 14 | 15 | 0.8 |
.033 | 20 | 15 | 9 | 15.0 | 0.6 | 20 | 14 | 9 | 15 | 0.6 | 20 | 21 | 14 | 15 | 0.8 |
.047 | 20 | 15 | 9 | 15.0 | 0.6 | 20 | 18 | 12 | 15 | 0.8 | 21 | 21 | 16 | 15 | 0.8 |
.068 | 20 | 15 | 12 | 15.0 | 0.8 | 24 | 18 | 12 | 20.0 | 0.8 | 31 | 21 | 12 | 27.5 | 0.8 |
.1 | 20 | 18 | 12 | 15.0 | 0.8 | 24 | 20 | 12 | 20.0 | 0.8 | 31 | 21 | 14 | 27.5 | 0.8 |
.15 | 24 | 18 | 14 | 20.0 | 0.8 | 24 | 20 | 14 | 20.0 | 0.8 | 31 | 21 | 18 | 27.5 | 0.8 |
.22 | 24 | 18 | 14 | 20.0 | 0.8 | 24 | 24 | 18 | 20.0 | 0.8 | 31 | 28 | 18 | 27.5 | 0.8 |
.33 | 31 | 24 | 18 | 27.5 | 0.8 | 32 | 27 | 21 | 27.5 | 0.8 | |||||
.47 | 31 | 24 | 18 | 27.5 | 0.8 | 32 | 27 | 21 | 27.5 | 0.8 |
1. OPERATING TEMPERATURE : -40℃ ~ 85℃
2. DIELECTRIC STRENGTH : 150% of rated voltage for 1 minute at 25℃
3. DISSIPATION FACTOR : 0.1% MAX. at 1KHz, 25℃
4. INSULATION RESISTANCE :
≧30,000 MΩ ( C≦.1μF )
≧10,000 MΩ*C ( C>.1μF )
2. DIELECTRIC STRENGTH : 150% of rated voltage for 1 minute at 25℃
3. DISSIPATION FACTOR : 0.1% MAX. at 1KHz, 25℃
4. INSULATION RESISTANCE :
≧30,000 MΩ ( C≦.1μF )
≧10,000 MΩ*C ( C>.1μF )
1. DF值小,適合用於高頻及較大電流,如震盪電路
2. 耐電壓衝擊性較佳
3. IR值高,可適用於積分記憶電路以及比較迴路,常用作RC積分電路
2. 耐電壓衝擊性較佳
3. IR值高,可適用於積分記憶電路以及比較迴路,常用作RC積分電路